BT138-600E 查看數據表（PDF） - Unspecified
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BT138-600E Datasheet PDF : 13 Pages
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WeEn Semiconductors
10. Characteristics
Table 7. Characteristics
Symbol Parameter
Static characteristics
IGT
gate trigger current
IL
latching current
IH
holding current
VT
on-state voltage
VGT
gate trigger voltage
ID
off-state current
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
tgt
gate-controlled turn-on
time
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 15 A; Tj = 25 °C; Fig. 10
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
VD = 600 V; Tj = 125 °C
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
ITM = 16 A; VD = 600 V; IG = 0.1 A; dIG/
dt = 5 A/μs
BT138-600E
4Q Triac
Min Typ Max Unit
-
2.5
-
4
-
5
-
11
-
-
-
-
-
-
-
-
-
-
-
1.4
-
0.7
0.25 0.4
-
0.1
10
mA
10
mA
10
mA
25
mA
30
mA
40
mA
30
mA
40
mA
30
mA
1.65 V
1
V
-
V
0.5 mA
-
150 -
V/μs
-
2
-
μs
BT138-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 March 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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