2N4953(1997) 查看數據表（PDF） - Fairchild Semiconductor

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2N4953
(Rev.:1997)

NPN General Purpose Amplifier

Fairchild Semiconductor 

NPN General Purpose Amplifier

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage*

V(BR)CBO

V(BR)EBO

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC =10 mA, IB = 0

IC = 10 µA, IE = 0

IE = 10 µA, IC = 0

VCB = 40 V, IE = 0

VEB = 3.0 V, IC = 0

ON CHARACTERISTICS*

hFE

DC Current Gain

VCE(sat)

VBE(sat)

VBE(on)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

VCE = 10 V, IC = 1.0 mA

VCE = 10 V, IC = 10 mA

VCE = 10 V, IC = 150 mA

IC = 150 mA, IB = 15 mA

IC = 150 mA, IB = 15 mA

VCE = 10 V, IC = 150 mA

SMALL SIGNAL CHARACTERISTICS

Cob

Output Capacitance

hfe

Small-Signal Current Gain

ton

Turn-On Time

toff

Turn-Off Time

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

VCB = 10 V, f = 1.0 MHz

IC = 20 mA, VCE = 10 V,

f = 100 MHz

VCC = 30 V, IC = 150 mA,

IB1 = IB2 = 15 mA

30

V

60

V

5.0

V

50

nA

50

nA

75

150

200

600

0.3

V

1.3

V

1.2

V

8.0

pF

2.5

40

ns

400

ns

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