2N5605 查看數據表（PDF） - New Jersey Semiconductor

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2N5605

Silicon PNP Power Transistors

New Jersey Semiconductor 

Silicon PNP Power Transistors

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcEO(SUS) Collector-Emitter Sustaining Voltage lc= -50mA ; IB= 0

VcE(sat) Collector-Emitter Saturation Voltage lc= -2.5A; IB= -0.25A

VsE(sat) Base-Emitter Saturation Voltage

lc= -2.5A; IB= -0.25A

ICEO

Collector Cutoff Current

VCE= -60V; IB= 0

ICBO

Collector Cutoff Current

VCB= -80V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -6V; lc= 0 .

hFE

DC Current Gain

lc= -2.5A ; VCE= -5V

fr

Current-Gain—Bandwidth Product lc=-0.5A;VCE=-10V

2N5605

MIN MAX UNIT

-60

V

-0.75

V

-1.45

V

-1.0

mA

-0.1

mA

-0.1

rnA

70

200

60

MHz

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