2N5237JX 查看數據表（PDF） - Semicoa Semiconductor

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2N5237JX

Silicon NPN Transistor

Semicoa Semiconductor 

Description

Semicoa Semiconductors offers:

• Screening and processing per MIL-PRF-19500 Appendix E

• JAN level (2N5237J)

• JANTX level (2N5237JX)

• JANTXV level (2N5237JV)

• QCI to the applicable level

• 100% die visual inspection per MIL-STD-750 method

2072 for JANTXV

• Radiation testing (total dose) upon request

Please contact Semicoa for special configurations

www.SEMICOA.com or (714) 979-1900

Absolute Maximum Ratings

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current, Continuous

Power Dissipation, TA = 25°C

Derate linearly above 25°C

Power Dissipation, TC = 25°C

Derate linearly above 100°C

Thermal Resistance

Operating Junction Temperature

Storage Temperature

Symbol

VCEO

VCBO

VEBO

IC

PT

PT

RθJA

RθJC

TJ

TSTG

2N5237

Silicon NPN Transistor

Data Sheet

Applications

• General purpose

• Low power, High voltage

• NPN silicon transistor

Features

• Hermetically sealed TO-5 metal can

• Also available in chip configuration

• Chip geometry 3111

• Reference document:

MIL-PRF-19500/394

Benefits

• Qualification Levels: JAN, JANTX, and

JANTXV

• Radiation testing available

TC = 25°C unless otherwise specified

Rating

Unit

120

Volts

150

Volts

10

Volts

10

A

1

W

5.7

mW/°C

5

W

50

mW/°C

.175

.020

°C/W

-65 to +200

°C

Copyright 2002

Rev. F

Semicoa Semiconductors, Inc.

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

www.SEMICOA.com

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