2SD2345J 查看數據表（PDF） - Panasonic Corporation

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2SD2345J

Silicon NPN epitaxial planar type

Panasonic Corporation 

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SD2345J

Silicon NPN epitaxial planar type

For low frequency amplification

 Features

 High forward current transfer ratio hFE

 Low collector-emitter saturation voltage VCE(sat)

 High emitter-base voltage (Collector open) VEBO

/  Low noise voltage NV

e  Absolute Maximum Ratings Ta = 25°C

e. Parameter

Symbol Rating

Unit

nc d stag Collector-base voltage (Emitter open)

VCBO

50

V

cle Collector-emitter voltage (Base open)

VCEO

40

V

a e lifecy Emitter-base voltage (Collector open)

VEBO

15

V

ct Collector current

IC

50

mA

n u du Peak collector current

Pro Collector power dissipation

te tin four Junctiontemperature

ICP

100

mA

PC

125

mW

Tj

125

°C

wing type tion. Storage temperature

Tstg –55 to +125 °C

1.60+–00..0035

1.00±0.05

3

12

0.27±0.02

(0.50)(0.50)

5°

0.12+–00..0013

Unit: mm

1: Base

2: Emitter

3: Collector

EIAJ: SC-89

Marking Symbol: 1Z

SSMini3-F1 Package

ain onludes foilnlotenancceetyped typed t inform/aen/  Electrical Characteristics Ta = 25°C±3°C

c ed inc ed ma tenan tinue type lates o.jp Parameter

Symbol

Conditions

Min Typ Max

M is tinu lan ain con ed ut ic.c Collector-base voltage (Emitter open)

VCBO IC = 10 µA, IE = 0

50

p m dis tinu abo son Collector-emitter voltage (Base open)

VCEO IC = 1 mA, IB = 0

40

iscon ned con RL ana Emitter-base voltage (Collector open)

VEBO IE = 10 µA, IC = 0

15

/D pla dis g U n.p Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0

0.1

D ce win ico Collector-emitter cutoff current (Base open) ICEO VCE = 20 V, IB = 0

1

tenan follo .sem Forward current transfer ratio *

hFE VCE = 10 V, IC = 2 mA

600

2 000

in isit ww Collector-emitter saturation voltage

VCE(sat) IC = 10 mA, IB = 1 mA

0.05 0.2

Ma e v ://w Transition frequency

fT VCB = 10 V, IE = —2 mA, f = 200 MHz

120

as ttp Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Ple h 2. *: Rank classification

Unit

V

V

V

µA

µA



V

MHz

Rank

S

T

hFE

600 to 1200 1000 to 2000

Publication date: November 2005

SJC00337AED

1

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