PUMD10,125 查看數據表（PDF） - NXP Semiconductors.
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PUMD10,125 Datasheet PDF : 17 Pages
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NXP Semiconductors
PEMD10; PUMD10
NPN/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
103
hFE
102
10
006aac805
(1)
(2)
(3)
1
VCEsat
(V)
10-1
006aac810
(1)
(2)
(3)
1
10-1
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 4. TR1 (NPN): DC current gain as a function of
collector current; typical values
10
006aac811
VI(on)
(V)
10-2
10-1
1
10
102
IC (mA)
IC/IB = 20
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 5.
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
1
VI(off)
(V)
006aac812
(1)
(2)
(3)
1
(1)
(2)
(3)
10-1
10-1
1
10
102
IC (mA)
VCE = 0.3 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 6. TR1 (NPN): On-state input voltage as a
function of collector current; typical values
10-1
10-1
1
10
IC (mA)
VCE = 5 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 7. TR1 (NPN): Off-state input voltage as a
function of collector current; typical values
PEMD10_PUMD10
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 4 January 2012
© NXP B.V. 2012. All rights reserved.
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