MMSF2P02E
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 3.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
−
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 4.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
IDSS
−
−
IGSS
−
VGS(th)
1.0
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
RDS(on)
−
−
gFS
1.0
Ciss
−
Coss
−
Crss
−
SWITCHING CHARACTERISTICS (Note 5.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 5.0 Vdc,
RG = 6.0 Ω)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
Gate Charge
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
td(on)
−
tr
−
td(off)
−
tf
−
td(on)
−
tr
−
td(off)
−
tf
−
QT
−
Q1
−
Q2
−
Q3
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 4.)
(IS = 2.0 Adc, VGS = 0 Vdc)
VSD
−
Reverse Recovery Time
trr
−
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
ta
−
tb
−
Reverse Recovery Stored Charge
QRR
−
3. Negative sign for P−Channel device omitted for clarity.
4. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
Typ
−
24.7
−
−
−
2.0
4.7
0.19
0.3
2.8
340
220
75
20
40
53
41
13
29
30
28
10
1.1
3.3
2.5
1.5
34
18
16
0.035
Max
Unit
Vdc
−
−
mV/°C
μAdc
1.0
10
100
nAdc
Vdc
3.0
−
mV/°C
Ohm
0.25
0.4
−
Mhos
475
pF
300
150
40
ns
80
106
82
26
ns
58
60
56
15
nC
−
−
−
2.0
Vdc
64
ns
−
−
−
μC
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