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MJ4032 查看數據表(PDF) - Inchange Semiconductor

零件编号
产品描述 (功能)
生产厂家
MJ4032
Iscsemi
Inchange Semiconductor 
MJ4032 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlingtion Power Transistor
MJ4032
DESCRIPTION
·With TO-3 package
·Respectively complement to type MJ4035
·DARLINGTON
·High DC current gain
APPLICATIONS
·For use as output devices in complementary general
purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current
-16
A
IBB
Base Current
-0.5
A
PC
Collector Power Dissipation@TC=25150
W
TJ
Junction Temperature
200
Tstg
Storage Temperature
-55~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.17
UNIT
/W
isc Websitewww.iscsemi.cn

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