NJVMJD32CT4G 查看數據表（PDF） - ON Semiconductor
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NJVMJD32CT4G Datasheet PDF : 11 Pages
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MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP)
1000
150°C
25°C
VCE = 4 V
1000
150°C
25°C
VCE = 2 V
100
−55°C
100
−55°C
10
10
1
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 15. DC Current Gain at VCE = 4 V
1
0.9 IC/IB = 10
150°C
0.8
−55°C
0.7
0.6
0.5
0.4
0.3
0.2
0.1
25°C
0
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 17. Collector−Emitter Saturation
Voltage
1.2
1.1 VCE = 5 V
1.0
0.9
0.8
150°C
0.7
25°C
0.6
0.5
0.4
−55°C
0.3
0.2
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 19. Base−Emitter “On” Voltage
1
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 16. DC Current Gain at VCE = 2 V
1.4
IC/IB = 10
1.2
1.0
−55°C
0.8
25°C
0.6
0.4
150°C
0.2
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 18. Base−Emitter Saturation Voltage
2
500 mA
TA =
25°C
1.6
100 mA
1.2
IC = 3 A
1A
0.8
0.4
10 mA
0
0.01
0.1
1
10
100
1000
IB, BASE CURRENT (mA)
Figure 20. Collector Saturation Region
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