16N03L 查看數據表（PDF） - Harris Semiconductor
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16N03L
Harris Semiconductor
16N03L Datasheet PDF : 7 Pages
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RFD16N03L, RFD16N03LSM
Typical Performance Curves
TC = +25oC
500
100
100µs
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1
1
VDSS MAX = 30V
10
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
1ms
10ms
100ms
DC
50
FIGURE 1. SAFE OPERATING AREA CURVE
2
1
0.5
0.2
PDM
0.1 0.1
.05
.02
.01
SINGLE PULSE
0.01
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
20
15
10
5
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
TC = +25oC
500
VGS = 10V
VGS = 5V
FOR TEMPERATURES
ABOVE +25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25 175 - TC
150
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
100
VGS = 10V
75
50
PULSE DURATION = 250µs, TC = +25oC
VGS = 5V
VGS = 4.5V
VGS = 4V
VGS = 3.5V
25
VGS = 3V
0
0
1.0
2.0
3.0
4.0
5.0
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
VDD = 15V
100
-55oC
+175oC
75
+25oC
50
25
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
0
0
1.5
3.0
4.5
6.0
7.5
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
5-33
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