HYB39S256400T-10 查看數據表（PDF） - Infineon Technologies

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HYB39S256400T-10

256 MBit Synchronous DRAM

Infineon Technologies 

HYB 39S256400/800/160T

256 MBit Synchronous DRAM

AC Characteristics 1, 2, 3 (cont’d)

TA = 0 to 70 °C; VSS = 0 V; VDD = 3.3 V ± 0.3 V, tT = 1 ns

Parameter

Symb.

Limit Values

Unit Note

-8

-8B

-10

min. max. min. max. min. max.

Refresh Cycle

Refresh Period

(8192 cycles)

Self Refresh Exit time

tREF

–

64 –

64 –

64 ms

tSREX 10 –

10 –

10 –

ns

Read Cycle

Data Out Hold time

tOH

3

–

3

–

3

–

ns 2

Data Out to Low Impedance tLZ

time

0 – 0 – 0 – ns

Data Out to High Impedance tHZ

3

8

3

10 3

10 ns 8

time

DQM Data Out Disable

latency

tDQZ

–

2

–

2

–

2

CLK

Write Cycle

Data Input to Precharge

DQM Write Mask Latency

tWR

2

–

2

–

2

–

CLK

tDQW 0

–

0

–

0

–

CLK

Semiconductor Group

18

1998-10-01

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