BF870 查看數據表（PDF） - Philips Electronics

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BF870

PNP high-voltage transistors

Philips Electronics 

Philips Semiconductors

PNP high-voltage transistors

Product specification

BF870; BF872

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

VEBO

IC

ICM

IBM

Ptot

Tstg

Tj

Tamb

collector-base voltage

BF870

BF872

collector-emitter voltage

BF870

BF872

emitter-base voltage

collector current (DC)

peak collector current

peak base current

total power dissipation

storage temperature

junction temperature

operating ambient temperature

open emitter

open base

open collector

Tamb ≤ 25 °C

Tmb ≤ 25 °C

MIN. MAX. UNIT

−

−250 V

−

−300 V

−

−250 V

−

−300 V

−

−5

V

−

−50

nA

−

−100 mA

−

−50

mA

−

1.6

W

−

5

W

−65

+150 °C

−

150

°C

−65

+150 °C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

Rth j-mb

thermal resistance from junction to ambient

thermal resistance from junction to mounting base

VALUE

78

25

UNIT

K/W

K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

ICBO

IEBO

hFE

VCEsat

Cre

fT

collector cut-off current

IE = 0; VCB = −200 V

−

IE = 0; VCB = −200 V; Tj = 150 °C

−

emitter cut-off current

IC = 0; VEB = −5 V

−

DC current gain

IC = −25 mA; VCE = −20 V

50

collector-emitter saturation voltage IC = −30 mA; IB = −5 mA

−

feedback capacitance

IC = ic = 0; VCE = −30 V; f = 1MHz

−

transition frequency

IC = −10 mA; VCE = −10 V; f = 100 MHz 60

MAX.

−10

−10

−50

−

−600

2.2

−

UNIT

nA

µA

nA

mV

pF

MHz

1996 Dec 09

3

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