FZT603(1995) 查看數據表（PDF） - Diodes Incorporated.

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FZT603
(Rev.:1995)

SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

Diodes Incorporated. 

FZT603

ELECTRICAL CHARACTERISTICS (Continued)

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Base-Emitter

Saturation Voltage

VBE(sat)

1.7 1.95 V

IC=2A, IB=20mA*

Base-Emitter Turn-On Voltage VBE(on)

Static Forward

hFE

Current Transfer Ratio

Transition Frequency

fT

1.5 1.75 V

IC=2A, VCE=5V*

3k 14k

5k 15k 100k

3k 14k

2k 10k

2k

750

IC=50mA, VCE=5V*

IC=500mA, VCE=5V*

IC=1A, VCE=5V*

IC=2A, VCE=5V*

IC=5A, VCE=5V*

IC=6A, VCE=5V*

150

MHz IC=100mA, VCE=10V

f=20MHz

Output Capacitance

Cibo

90

pF

Output Capacitance

Cobo

15

pF

Switching Times

ton

0.5

µs

toff

1.6

µs

*Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤2%

Spice parameter data is available upon request for this device

VEB=500mV, f=1MHz

VCB=10V, f=1MHz

IC=0.5A, VCE=10V

IB1=IB2=0.5mA

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