FJN5471 查看數據表（PDF） - Fairchild Semiconductor

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FJN5471

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

FJN5471

For Output Amplifier of Electronic Flash Unit

• High DC Currrent Gain

• Low Collector-Emitter Saturation Voltage

• High Performance at Low Supply Voltage

1

TO-92

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

Ratings

40

20

7

5

0.75

150

-55 ~ 150

Units

V

V

V

A

W

°C

°C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCEO

BVEBO

ICBO

IEBO

hFE

VCE (sat)

VBE (sat)

fT

Cob

Collector-Emitter Voltage

Emitter Base Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Band Width Product

Collector Output Capacitance

IC=1mA, IB=0

IC=100µA, IC=0

VCB=10V, IE=0

VEB=7V, IC=0

VCE=2V, IC=0.5A

IC=3A, IB=0.1A

IC=3A, IB=0.1A

VCE=6V, IC=50mA

VCB=20V, IE=0, f=1MHz

Min.

20

7

700

Typ.

1000

150

25

Max.

0.1

0.1

Units

V

V

µA

µA

0.5

V

1.5

V

MHz

pF

Thermal Characteristics TC=25°C unless otherwise noted

Symbol

Parameter

RθjA

Thermal Resistance, Junction to Ambient

Max

Units

165

°C/W

©2002 Fairchild Semiconductor Corporation

Rev. A1, August 2002

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