DF65435 查看數據表（PDF） - Dynex Semiconductor

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DF65435

Fast Recovery Diode

Dynex Semiconductor 

10000

Conditions:

Tj = 150˚C,

VR = 100V

1000

100

10

1

0.100

A

B

C

D

E

A: IF = 2000A

B: IF = 1000A

C: IF = 500A

D: IF = 200A

E: IF = 100A

10

100

Rate of rise of reverse current dIR/dt - (A/µs)

Fig.4 Typical reverse recovery current

1000

d.c. Double side cooled

DF654

0.010

0.001

0.01

0.1

1

10

100

Time - (s)

Fig.5 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)

5/7

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