DF75435 查看數據表（PDF） - Dynex Semiconductor

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产品描述 (功能)

生产厂家

DF75435

Fast Recovery Diode

Dynex Semiconductor 

DF754

SURGE RATINGS

Symbol

Parameter

I

Surge (non-repetitive) forward current

FSM

I2t

I2t for fusing

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

I

Surge (non-repetitive) forward current

FSM

I2t

I2t for fusing

THERMAL AND MECHANICAL DATA

Symbol

Parameter

R

th(j-c)

Thermal resistance - junction to case

R

Thermal resistance - case to heatsink

th(c-h)

Tvj

Virtual junction temperature

T

Storage temperature range

stg

-

Clamping force

Conditions

10ms half sine; with 0% VRRM, Tj = 150oC

10ms half sine; with 50% VRRM, Tj = 150oC

10ms half sine; with 100% VRRM, Tj = 150oC

Max. Units

8.0

kA

320 x 103 A2s

-

kA

-

A2s

-

kA

-

A2s

Conditions

Double side cooled

dc

Single side cooled

Anode dc

Cathode dc

Clamping force 15kN

with mounting compound

Double side

Single side

On-state (conducting)

Min. Max. Units

- 0.036 oC/W

-

0.069 oC/W

- 0.076 oC/W

-

0.01 oC/W

-

0.02 oC/W

-

150

oC

-55 175

oC

13.5 16.5 kN

2/9

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