FPN530 查看數據表（PDF） - Fairchild Semiconductor
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FPN530 Datasheet PDF : 4 Pages
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NPN Low Saturation Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BVCEO
BVCBO
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 10 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 100°C
VEB = 4.0 V, IC = 0
30
V
60
V
5.0
V
100
nA
10
µA
100
nA
ON CHARACTERISTICS*
hFE
VCE(sat)
VBE(sat)
VBE(on)
DC Current Gain
IC = 100 mA, VCE = 2.0 V 530
100
530A 250
IC = 1.0 A, VCE = 2.0 V
120
IC = 2.0 A, VCE = 2.0 V
80
Collector-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA
530
300
mV
530A
250
mV
IC = 2.0 A, IB = 200 mA
450
mV
Base-Emitter Saturation Voltage
IC = 1.0 A, IB = 100 mA
1.25
V
Base-Emitter Saturation Voltage
IC = 1.0 A, VCE = 2.0 V
1.0
V
SMALL SIGNAL CHARACTERISTICS
Cobo
FT
Output Capacitance
Transition Frequency
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
VCB = 10 V, IE = 0, f = 1.0 MHz
IC = 100 mA, VCE = 5.0 V,
f = 100 MHz
50
pF
150
MHz
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