BUV52A 查看數據表（PDF） - Inchange Semiconductor
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BUV52A Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV52A
DESCRIPTION
·High Current Capability
·Low Collector Saturation Voltage-
: VCE(sat)= 0.9V (Max.) @IC= 7A
·High Switching Speed
APPLICATIONS
·Designed for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage
(VBE= -1.5V)
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
IBM
Base Current-peak
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
400
V
300
V
7
V
20
A
30
A
4
A
6
A
150
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W
isc website：www.iscsemi.cn
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