QSE133 查看數據表（PDF） - Fairchild Semiconductor
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QSE133 Datasheet PDF : 4 Pages
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PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE133
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(2,3,4)
Soldering Temperature (Flow)(2,3)
Collector Emitter Voltage
Emitter Collector Voltage
Power Dissipation(1)
TOPR
-40 to +100
°C
TSTG
-40 to +100
°C
TSOL-I
240 for 5 sec
°C
TSOL-F
260 for 10 sec
°C
VCE
30
V
VEC
5
V
PD
100
mW
NOTES:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing.
5. λ = 880 nm (AlGaAs).
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C unless otherwise specified)
Parameter
Test Conditions
Symbol Min
Typ
Max
Peak Sensitivity
λPS
—
880
—
Reception Angle
Θ
—
±25
—
Collector Emitter Dark Current
VCE = 10 V, Ee = 0
ICEO
—
—
100
Collector-Emitter Breakdown
IC = 1 mA
BVCEO
30
—
—
Emitter-Collector Breakdown
IE = 100 µA
BVECO
5
—
—
On-State Collector Current(5)
Ee = 0.25 mW/cm2, VCE = 5 V
IC(ON)
9.0
—
—
Saturation Voltage(5)
Ee = 0.5 mW/cm2, IC = 0.4 mA VCE(SAT)
—
—
1.0
Rise Time
Fall Time
IC = 0.15mA, VCC = 5V,
RL = 100Ω
tr
—
20
—
tf
—
50
—
Units
nM
Deg.
nA
V
V
mA
V
µs
µs
© 2002 Fairchild Semiconductor Corporation
Page 2 of 4
5/1/02
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