BLF175 查看數據表（PDF） - Philips Electronics
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BLF175 Datasheet PDF : 11 Pages
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Philips Semiconductors
UHF power transistor
Product specification
BLX94C
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)CES
V(BR)CEO
V(BR)EBO
VCEsat
ICES
ESBR
hFE
fT
collector-emitter breakdown voltage VBE = 0; IC = 25 mA
collector-emitter breakdown voltage open base; IC = 100 mA
emitter-base breakdown voltage open collector; IE = 10 mA
collector-emitter saturation voltage IC = 4 A; IB = 0.8 A; note 1
collector cut-off current
VBE = 0; VCE = 30 V
second breakdown energy
open base; L = 25 mH; f = 50 Hz
RBE = 10 Ω; L = 25 mH; f = 50 Hz
DC current gain
transition frequency
VCE = 5 V; IC = 1.5 A; note 1
VCB = 28 V; IE = −1.5 A;
f = 500 MHz; note 1
VCB = 28 V; IE = −4 A;
f = 500 MHz; note 1
Cc
collector capacitance
Cre
feedback capacitance
Cc-s
collector-stud capacitance
VCB = 28 V; IE = ie = 0; f = 1 MHz
VCE = 28 V; IC = 20 mA; f = 1 MHz;
Note
1. Measured under pulsed conditions: tp ≤ 200 µs; δ ≤ 0.02.
MIN. TYP. MAX. UNIT
65 −
−
V
30 −
−
V
4
−
−
V
−
1.5 −
V
−
−
10 mA
3
−
−
mJ
3
−
−
mJ
15 50 −
−
1.1 −
fT
−
0.75 −
fT
−
33 −
pF
−
18 −
pF
−
1.2 −
pF
handboo1k,0h0alfpage
hFE
50
MBH099
VCE = 25 V
5V
handbook,7h5alfpage
Cc
(pF)
50
25
MBH098
0
0
2
IC (A)
4
Measured under pulsed conditions; tp ≤ 200 µs; δ ≤ 0.02;Tj = 25 °C.
(1) VCE = 25 V.
(2) VCE = 5 V.
Fig.4 DC current gain as a function of collector
current; typical values.
0
0
20
VCB (V)
40
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.5 Collector capacitance as a function of
collector-base voltage; typical values.
1996 Feb 06
4
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