BDX96 查看數據表（PDF） - New Jersey Semiconductor
零件编号
产品描述 (功能)
生产厂家
BDX96 Datasheet PDF : 2 Pages
| |||
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Collector-Emitter
V(BR)CEO Breakdown Voltage
BDX92
BDX94 lc=-30mA;lB=0
BDX96
VcE(sat)-1 Collector-Emitter Saturation Voltage |c= -3A; IB= -0.3A
VcE(sat)-2 Collector-Emitter Saturation Voltage IC=-5A;IB=-1A
VBE(sat)-1 Base-Emitter Saturation Voltage
lc= -3A; IB= -0.3A
VeE(sat)-2 Base-Emitter Saturation Voltage
IC=-5A;IB=-1A
VBE(on)
ICBO
ICEO
Base-Emitter On Voltage
Collector
Cutoff Current
BDX92
BDX94
BDX96
Collector
Cutoff Current
BDX92
BDX94
BDX96
lc= -3A; VCE= -2V
VCB= -60V;IE= 0
VCB=-30V;IE=0;TC=150'C
VCB= -80V; IE= 0
VCB=-40V; IE=0;TC=150'C
VCB=-100V;IE=0
VCB=-50V;IE=0;TC=150°C
VCE= -60V; IB= 0
VCE= -80V; IB= 0
VCE=-100V;IB=0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hpE-1 DC Current Gain
lc= -3A; VCE= -2V
hFE-2
DC Current Gain
lc= -5A; VCE= -2V
fi
Current-Gain—Bandwidth Product lc=-1A;VCE=-10V
Switching times
ton
Turn-on Time
toff
Turn-off Time
i_ T A . i_, !„„ n OA
BDX92/94/96
MIN TYP. MAX UNIT
-45
-60
V
-80
-0.8
V
-1.0
V
-1.5
V
-2.0
V
-1.4 V
-0.1
-2.0
-0.1
-2.0
mA
-0.1
-2.0
-0.2 mA
-0.1 mA
20
10
4
MHz
1.0
us
2.0
ws
Share Link: 