BDP950(2001) 查看數據表（PDF） - Infineon Technologies
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BDP950 Datasheet PDF : 4 Pages
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BDP948, BDP950
Collector cutoff current ICBO = f (TA)
VCB = 45V
10 5
nA
10 4
10 3
max
10 2
10 1
typ
10 0
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
10 4
mA
10 3
100°C
10 2
25°C
-50°C
10 1
10 -1
0
20 40 60 80 100 120 °C 150
TA
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
10 0
0.0
0.1 0.2
0.3
0.4
V
0.6
VCEsat
Collector current IC = f (VBE)
VCE = 2V
10 4
mA
10 4
mA
10 3
10 3
-50°C
-50°C
25°C
25°C
100°C
10 2
100°C
10 2
10 1
10 1
10 0
0.0 0.2 0.4 0.6 0.8 1.0 V 1.3
VBEsat
4
10 0
0.0 0.2 0.4 0.6 0.8 1.0 V 1.3
VBE
Jul-06-2001
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