HA-5102, HA-5104, HA-5112, HA-5114
Die Characteristics
DIE DIMENSIONS:
95 mils x 99 mils x 19 mils
2420µm x 2530µm x 483µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ±2kÅ
PASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
Metallization Mask Layout
+IN2
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT:
175
PROCESS:
Bipolar Dielectric Isolation
HA-5104
V+
+IN1
-IN2
-IN1
OUT2
OUT3
-IN3
+IN3
+IN2
-IN2
V-
HA-5114
V+
OUT1
OUT4
-IN4
+IN4
+IN1
-IN1
OUT2
OUT3
OUT1
OUT4
-IN3
+IN3
V-
3-431
-IN4
+IN4