KSC5504D 查看數據表（PDF） - Fairchild Semiconductor

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KSC5504D

NPN Triple Diffused Planar Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

6

IB = 2 A

IB = 1.8 A

5

IB = 1.6 A

IB =1.4 A

IB =1.2 A

4

IB =1 A

IB = 800 m A

IB = 600 m A

3

IB = 400 m A

IB = 200 m A

2

1

0

0

1

2

3

4

5

6

7

8

V [v] , CO LLECTO R EM ITTER VO LTAG E

CE

Figure 1. Static Characteristic

100

Tj = 125 oC

Tj = 25 oC

10

VCE = 1 V

1

1m

10m

100m

1

I C [A] , COLLECTOR CURRENT

Figure 2. DC current Gain

I =5I

C

B

10

1

0.1

1m

T = 25 oC

j

T = 125 oC

j

10m

100m

1

I [A] , CO LLE CTO R CURRE NT

C

Figure 3. Collector-Emitter Saturation Voltage

2.0

T =25 oC

j

I =1.5 A

C

1.5

I =0.1 A

C

1.0

I =1.0 A

C

I =0.5 A

C

I =2.0 A

C

0.5

0.0

1E-3

0.01

0.1

1

I [A], BASE CURRENT

B

Figure 5. Typical Collector Saturation Voltage

©2001 Fairchild Semiconductor Corporation

I = 10 I

C

B

10

1

0.1

1m

T = 25 oC

j

T = 125 oC

j

10m

100m

1

I [A ] , CO LLE C TO R C U R R E N T

C

Figure 4. Collector-Emitter Saturation Voltage

10

I = 10 I

C

B

1

T = 25 oC

j

T = 125 oC

j

0.1

1m

10m

100m

1

IC [A ] , C O LLEC TO R C U R R E N T

Figure 6. Base-Emitter Saturation Voltage

Rev. A1, June 2001

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