IXFK25N80 查看數據表（PDF） - IXYS CORPORATION
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IXFK25N80 Datasheet PDF : 4 Pages
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IXFK 25N80 IXFK 27N80
IXFN 25N80 IXFN 27N80
12
10
VVDdSs==340000VV
ID==3207AA
IG==110mmA
8
6
4
2
0
0
100 200 300 400 500
Gate Charge - nC
Figure 7. Gate Charge
100
10000
1000
Ciss
Coss
Crss
f = 1MHz
100
0
5 10 15 20 25 30 35 40
VDS - Volts
Figure 8. Capacitance Curves
80
60
TJ = 125OC
40
TJ = 25OC
20
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Volts
Figure 9. Forward Voltage Drop of the Intrinsic Diode
1
D=0.5
0.1
D=0.2
D=0.1
D=0.05
0.01 D=0.02
D=0.01
Single pulse
D = Duty Cycle
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
Figure 10. Transient Thermal Resistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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