FDS6814 查看數據表（PDF） - Fairchild Semiconductor
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FDS6814 Datasheet PDF : 6 Pages
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Electrical Characteristics TA=25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage, Forward
IGSSR
Gate-Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
VDS = 16 V, VGS = 0 V
VGS = 12 V, VDS = 0 V
VGS = -12 V, VDS = 0 V
20
V
1
µA
100
nA
-100
nA
ON CHARACTERISTICS (Note 2)
VGS(TH)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source
On-Resistance
ID(ON)
On-State Drain Current
VDS = VGS, ID = 250 µA
VGS = 4.5 V, ID = 8 A
VGS = 2.5 V, ID = 6.5 A
VGS = 4.5 V, VDS = 5.0 V
0.6
1.5
V
0.02
Ω
0.03
25
A
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
VGS = 0 V, IS = 1.3 A
(Note 2)
Voltage
1.3
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design. Thermal rating based on independent single device operation.
a) 78° C/W when
mounted on a 0.5 in2
pad of 2 oz. copper.
b) 125° C/W when
mounted on a 0.02 in2
pad of 2 oz. copper.
c) 135° C/W when
mounted on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDS6814 Rev. A
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