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BA423AL

AM band-switching diode

Philips Electronics 

Philips Semiconductors

AM band-switching diode

Product specification

BA423AL

FEATURES

• Continuous reverse voltage:

max. 20 V

• Continuous forward current:

max. 50 mA

• Low diode capacitance:

max. 2.5 pF

• Low diode forward resistance:

max. 1.2 Ω.

APPLICATION

• Band switching in AM radio

receivers.

DESCRIPTION

Leadless diode in a hermetically-sealed glass SOD80C SMD package with

lead/tin plated metal discs at each end.

handbook, 4 columns

k

a

MAM061

Fig.1 Simplified outline (SOD80C) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

VR

continuous reverse voltage

IF

continuous forward current

Tstg

storage temperature

Tj

junction temperature

MIN.

−

−

−65

−

MAX.

20

50

+150

150

UNIT

V

mA

°C

°C

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

Cd

diode capacitance

rD

diode forward resistance

CONDITIONS

IF = 50 mA; see Fig.2

see Fig.3

VR = 20V

VR = 20 V; Tj = 125 °C

f = 1 MHz; VR = 3 V; see Fig.4

IF = 10 mA; f = 1 MHz; see Fig.5

MAX. UNIT

0.9 V

100

nA

5

µA

2.5 pF

1.2 Ω

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

Note

1. Device mounted on a FR4 printed-circuit board.

note 1

CONDITIONS

VALUE

300

375

UNIT

K/W

K/W

1996 Mar 13

2

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