TLP112A 查看數據表（PDF） - Toshiba
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TLP112A Datasheet PDF : 7 Pages
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Absolute Maximum Ratings (Ta = 25°C)
TLP112A
Characteristic
Symbol
Rating
Unit
Forward current
Forward Current Derating (Ta ≥ 70 °C)
Pulse forward current
Peak transient forward current
Reverse voltage
Diode power dissipation
Output current
Peak output current
Supply voltage
Output voltage
Output power dissipation
Output Power Dissipation Derating (Ta ≥ 70°C)
Operating temperature range
Storage temperature range
Lead soldering temperature(10 s)
Isolation voltage
(AC, 60 s, R.H ≤ 60%)
(Note 1)
(Note 2)
(Note 3)
IF
ΔIF/°C
IFP
IFPT
VR
PD
IO
IOP
VCC
VO
Po
ΔPo/°C
Topr
Tstg
Tsol
(Note 4)
BVS
20
-0.36
40
1
5
45
8
16
−0.5 to 15
−0.5 to 15
100
-1.8
−55 to 100
−55 to 125
260
mA
mA/°C
mA
A
V
mW
mA
mA
V
V
mW
mW/°C
°C
°C
°C
2500
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
(Note 1) 50% duty cycle,1ms pulse width. Derate 1.6mA / °C above 70°C
(Note 2) Pulse width ≤ 1μs, 300pps.
(Note 3) Derate 0.9mW / °C above 70°C
(Note 4) This device is regarded as a two terminal device: pins 1 and 3 are shorted together, as are pins 4, 5 and 6.
2
2017-05-25
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