BUL56B 查看數據表（PDF） - SavantIC Semiconductor

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BUL56B

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0

V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0

V(BR)EBO Emitter-base breakdwon voltage

IE=1mA ;IC=0

VCEsat-1 Collector-emitter saturation voltage IC=1A ;IB=0.1A

VCEsat-2 Collector-emitter saturation voltage IC=7A ;IB=0.7A

VCEsat-3 Collector-emitter saturation voltage IC=12A; IB=1.2A

VBEsat-1 Base-emitter saturation voltage

IC=7A; IB=0.7A

VBEsat-2 Base-emitter saturation voltage

ICBO

Collector cut-off current

ICEO

Collector cut-off current

IEBO

Emitter cut-off current

hFE-1

DC current gain

IC=12A; IB=1.2A

VCB=250V; IE=0

TC=125

VCE=90V ;IB=0

VEB=9V; IC=0

TC=125

IC=0.3A ; VCE=5V

hFE-2

DC current gain

IC=5A ; VCE=5V

hFE-3

DC current gain

IC=12A ; VCE=1V

fT

Transition frequency

IC=0.2A ; VCE=4V

Cob

Output capacitance

VCB=100V ;f=1MHz

Product Specification

BUL56B

MIN TYP. MAX UNIT

100

V

250

V

10

V

0.2

V

0.6

V

1.2

V

1.2

V

1.8

V

10

100

µA

100

µA

10

100

µA

30

90

25

60

5

20

MHz

100

pF

2

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