HYB3164165T-60 查看數據表（PDF） - Infineon Technologies

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HYB3164165T-60

4M x 16-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)

Infineon Technologies 

HYB3164(5)165T(L)-50/-60

4M x 16 EDO-DRAM

TRUTH TABLE

FUNCTION

Standby

Read:Word

Read:Lower Byte

RAS LCAS UCA

S

H H-X H-X

LL

H

LL

H

Read:Upper Byte

LH

L

Write:Word

L

(Early-Write)

Write:Lower Byte

L

(Early-Write)

Write:Upper Byte

L

(Early Write)

Read-Modify-

L

Write

Hyper Page Mode 1st L

Read (Word)

Cycle

L

L

L

H

H

L

L

L

H-L H-L

WRIT

E

X

H

H

H

L

L

L

H-L

H

OE ROW

ADD

XX

L ROW

L ROW

L ROW

X ROW

X ROW

X ROW

L - H ROW

L ROW

COL I/O1-

ADD I/O16

X

High Impedance

COL Data Out

COL Lower Byte:Data Out

Upper-Byte:High-Z

COL Lower Byte:High-Z

Upper Byte:Data Out

COL Data In

COL Lower Byte:Data Out

Upper-Byte:High-Z

COL Lower Byte:High-Z

Upper Byte:Data Out

COL Data Out, Data In

COL Data Out

Hyper Page Mode 2nd L

Read (Word)

Cycle

H-L H-L H

L n/a COL Data Out

Hyper Page Mode 1st L

Early Write(Word) Cycle

H-L H-L L

X ROW COL Data In

Hyper Page Mode 2nd L

Early Write(Word) Cycle

H-L H-L L

X n/a COL Data In

Hyper Page Mode 1st L

RMW

Cycle

H - L H - L H - L L - H ROW COL Data Out, Data In

Hyper Page Mode 2st L

RMW

Cycle

H - L H - L H - L L - H n/a

COL Data Out, Data In

RAS only refresh

CAS-before-RAS

refresh

Test Mode Entry

Hidden Refresh

(Read)

Hidden Refresh

(Write)

Self Refresh

(L-version only)

LH

H

X

H-L L

L

H

H-L L

L

L

L-H- L

L

H

L

L-H- L

L

L

L

H-L L

H

X

X ROW n/a High Impedance

XX

n/a High Impedance

XX

n/a High Impedance

L ROW COL Data Out

X ROW COL Data In

XX

X

High Impedance

Semiconductor Group

34

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