IRFR2605
IRFU2605
1000
800
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
600
Ciss
400
C oss
200
0
1
Crss
10
VDS , Drain-to-Source Voltage (V)
A
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I D = 11A
16
12
VDS = 44V
VDS = 26V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
5
10
15
20
25
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150°C
TJ = 25°C
1
0.1
0.0
VGS = 0V A
0.4
0.8
1.2
1.6
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10µs
10
100µs
TC = 25°C
1ms
TJ = 150°C
Single Pulse
1
A
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area