2SA1242 查看數據表（PDF） - Galaxy Semi-Conductor

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2SA1242

Silicon PNP Epitaxial Type

Galaxy Semi-Conductor 

Silicon PNP Epitaxial Type

FEATURESF

 Excellent hFE linearity.

 Low collector saturation voltage.

 High power dissipation.

Pb

Lead-free

APPLICATIONS

 Strobe Flash Applications.

 Medium Power Amplifier Applications.

Production specification

2SA1242

TO-251

TO-252

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

Parameter

Value

Units

VCBO

VCEO

Collector-Base Volage

Collector-Emitter Voltage

-35

V

-20

V

VEBO

Emitter-Base Voltage

-8

V

IC

Collector Current

-5

A

ICP

Collector Power Dissipation

-8

A

IB

Base Current

-0.5

A

Ta=25℃

1.0

PC

Collector Power Dissipation

W

Tc=25℃

10

Tj ,Tstg

Junction and Storage temperature range

-55 to +150

℃

V/(W)003

Rev.A

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