2SD1229 查看數據表（PDF） - SavantIC Semiconductor

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2SD1229

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1229

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=<

V(BR)CBO Collector-base breakdown voltage

IC=5mA ;IE=0

VCEsat Collector-emitter saturation voltage IC=5A ;IB=10mA

VBEsat

Base-emitter saturation voltage

IC=5A ;IB=10mA

ICBO

Collector cut-off current

VCB=40V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=5A ; VCE=2V

fT

Transition frequency

IC=5A ; VCE=5V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=500IB1=-500IB2=5A

VCC=20V;RL=4C

MIN TYP. MAX UNIT

60

V

70

V

1.5

V

2.0

V

0.1 mA

3.0 mA

2000

20

MHz

0.6

µs

3.0

µs

1.8

µs

2

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