2SD1022 查看數據表（PDF） - Inchange Semiconductor
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2SD1022 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1022
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 3mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 3mA
ICBO
Collector Cutoff Current
VCB= 100V; IE=0
ICEO
Collector Cutoff Current
VCE= 100V; IB=0
IEBO
Emitter Cutoff Current
VEB= 7V; IC=0
hFE
DC Current Gain
IC= 3A; VCE= 3V
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 5A, IB1= -IB2= 5mA
RL= 5Ω; VBB2= 4V
MIN TYP. MAX UNIT
1.5
V
2.0
V
0.1
mA
0.1
mA
5
mA
1500
30000
20
MHz
2.0
μs
5.0
μs
3.0
μs
isc Website：www.iscsemi.cn
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