1MBH10D-120 查看數據表（PDF） - Fuji Electric
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1MBH10D-120 Datasheet PDF : 5 Pages
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1MBH10D-120
Characteristics
Switching time vs. RG
Vcc=600V, IC=10A, VGE=±15V, Tj=25℃
Molded IGBT
Switching time vs. RG
Vcc=600V, IC=10A, VGE=±15V, Tj=125℃
Gate resistance : RG [Ω]
Dynamic input characteristics
Tj=25℃
Gate resistance : RG [Ω]
Capacitance vs. Collector-Emitter voltage
Tj=25℃
Gate charge : Qg [nQ]
Reverse Biased Safe Operating Area
+VGE=15V, -VGE≦15V, Tj=125℃, RG≧16Ω
Collector-Emitter voltage : VCE [V]
Typical short circuit capability
Vcc=800V, RG=16Ω, Tj=125℃
Collector-Emitter voltage : VCE [V]
3
Gate voltage : VGE [V]
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