HYB3117400BT 查看數據表（PDF） - Infineon Technologies
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HYB3117400BT Datasheet PDF : 26 Pages
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HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
The HYB 3116(7)400BJ/BT is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The
HYB 3116(7)400BJ/BT utilizes a submicron CMOS silicon gate process technology, as well as
advanced circuit techniques to provide wide operating margins, both internally and for the system
user. Multiplexed address inputs permit the HYB 3116(7)400BJ/BT to be packaged in a standard
SOJ 26/24 300 mil or TSOPII-26/24 300 mil wide plastic package. These packages provide high
system bit densities and are compatible with commonly used automatic testing and insertion
equipment. System-oriented features include single + 3.3 V (± 0.3 V) power supply, direct
interfacing with high-performance logic device families.The HYB3116400BTL parts have a very low
power „sleep mode“ supported by Self Refresh.
Ordering Information
Type
HYB 3117400BJ-50
HYB 3117400BJ-60
HYB 3117400BJ-70
HYB 3117400BT-50
HYB 3117400BT-60
HYB 3117400BT-70
HYB 3116400BJ-50
HYB 3116400BJ-60
HYB 3116400BJ-70
HYB 3116400BT-50
HYB 3116400BT-60
HYB 3116400BT-70
HYB 3116400BTL-50
HYB 3116400BTL-60
HYB 3116400BTL-70
Ordering Code
Package
P-SOJ-26/24-1 300 mil
P-SOJ-26/24-1 300 mil
P-SOJ-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
P-SOJ-26/24-1 300 mil
P-SOJ-26/24-1 300 mil
P-SOJ-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
Descriptions
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
LP-DRAM (access time 50 ns)
LP-DRAM (access time 60 ns)
LP-DRAM (access time 70 ns)
Semiconductor Group
2
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