HYB3118160BST-60 查看數據表（PDF） - Infineon Technologies
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HYB3118160BST-60 Datasheet PDF : 25 Pages
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HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
The HYB 3116(8)160BSJ/BST is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits.
The HYB 3116(8)160BSJ/BST utilizes a submicron CMOS silicon gate process technology, as well
as advanced circuit techniques to provide wide operating margins, both internally and for the system
user. Multiplexed address inputs permit the HYB 3116(8)160BSJ/BST to be packaged in standard
SOJ-42 and TSOPII-50/44 plastic package with 400mil width. These packages provide high system
bit densities and are compatible with commonly used automatic testing and insertion equipment.
System-oriented features include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high-
performance logic device families.The HYB3116160BSTL parts have a very low power „sleep
mode“ suppported by Self Refresh.
Ordering Information
Type
HYB 3116160BSJ-50
HYB 3116160BSJ-60
HYB 3116160BSJ-70
HYB 3118160BSJ-50
HYB 3118160BSJ-60
HYB 3118160BSJ-70
HYB 3116160BST-50
HYB 3116160BST-60
HYB 3116160BST-70
HYB 3118160BST-50
HYB 3118160BST-60
HYB 3118160BST-70
Ordering Code
on request
on request
on request
on request
on request
on request
on request
on request
on request
on request
on request
on request
Package
P-SOJ-42 400 mil
P-SOJ-42 400 mil
P-SOJ-42 400 mil
P-SOJ-42 400 mil
P-SOJ-42 400 mil
P-SOJ-42 400 mil
P-TSOPII-50/44 400 mil
P-TSOPII-50/44 400 mil
P-TSOPII-50/44 400 mil
P-TSOPII-50/44 400 mil
P-TSOPII-50/44 400 mil
P-TSOPII-50/44 400 mil
Descriptions
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
Pin Names
A0 to A9
A0 to A9
A0 to A11
A0 to A7
RAS
OE
I/O1-I/O16
UCAS
LCAS
WE
VCC
VSS
N.C.
Row Address Inputs for 1k-refresh version HYB3118160BSJ/BST
Column Addess Inputs for 1k-refresh version HYB3118160BSJ/BST
Row Address Inputs for 4k-refresh version HYB3116160BSJ/BST
Column Address Inputs for 4k-refresh version HYB3116160BSJ/BST
Row Address Strobe
Output Enable
Data Input/Output
Upper Column Address Strobe
Lower Column Address Strobe
Read/Write Input
Power Supply (+ 3.3 V)
Ground (0 V)
not connected
Semiconductor Group
2
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