DF452 查看數據表（PDF） - Dynex Semiconductor

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DF452

Fast Recovery Diode

Dynex Semiconductor 

DEFINITION OF K FACTOR AND QRA1

dIR/dt

t1

0.5x IRR

IRR

QRA1 = 0.5x IRR(t1 + t2)

t2 k = t1/t2

τ

CURVES

3000

Measured under pulse conditions

2500

2000

1500

1000

Tj = 150˚C

Tj = 25˚C

500

1.0

1.5

2.0

2.5

3.0

Instantaneous forward voltage VF - (V)

Fig.1 Maximum (limit) forward characteristics

DF452

3/7

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