BSP130 查看數據表（PDF） - Philips Electronics

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BSP130

N-channel enhancement mode vertical D-MOS transistor

Philips Electronics 

Philips Semiconductors

N-channel enhancement mode vertical

D-MOS transistor

Product specification

BSP130

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VDS

±VGSO

ID

IDM

Ptot

Tstg

Tj

drain-source voltage

gate-source voltage

DC drain current

peak drain current

total power dissipation

storage temperature

junction temperature

open drain

up to Tamb = 25 °C; note 1

MIN.

−

−

−

−

−

−65

−

MAX. UNIT

300 V

20 V

300 mA

1.4 A

1.5 W

+150 °C

150 °C

THERMAL RESISTANCE

SYMBOL

PARAMETER

THERMAL RESISTANCE

Rth j-a

from junction to ambient; note 1

83.3 K/W

Note

1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm2.

STATIC CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

V(BR)DSS

±IGSS

VGS(th)

RDS(on)

drain-source breakdown voltage

gate-source leakage current

gate-source threshold voltage

drain-source on-resistance

IDSS

 Yfs

Ciss

Coss

Crss

drain-source leakage current

transfer admittance

input capacitance

output capacitance

feedback capacitance

Switching times (see Figs 2 and 3)

ton

turn-on time

toff

turn-off time

CONDITIONS

ID = 10 µA; VGS = 0

±VGS = 20 V; VDS = 0

ID = 1 mA; VDS = VGS

ID = 20 mA; VGS = 2.4 V

ID = 250 mA; VGS = 10 V

VDS = 240 V; VGS = 0

ID = 250 mA; VDS = 25 V

VDS = 25 V; VGS = 0;

f = 1 MHz

VDS = 25 V; VGS = 0;

f = 1 MHz

VDS = 25 V; VGS = 0;

f = 1 MHz

ID = 250 mA; VDD = 50 V;

VGS = 0 to 10 V

ID = 250 mA; VDD = 50 V;

VGS = 10 to 0 V

MIN. TYP. MAX. UNIT

300 −

−

V

−

−

100 nA

0.8 −

2

V

−

7.9 14 Ω

−

6.7 8

Ω

−

−

100 nA

200 380 −

mS

−

57 90 pF

−

15 30 pF

−

2.6 15 pF

−

2.5 10 ns

−

17 30 ns

April 1995

3

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