TSTS730 查看數據表（PDF） - Vishay Semiconductors

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TSTS730

GaAs IR Emitting Diodes in Hermetically Sealed TO-18 Case

Vishay Semiconductors 

TSTS730.

Vishay Semiconductors

1.25

1.0

0.75

0.5

0.25

0

900

94 7994

IF = 100 mA

950

λ - Wavelength ( nm )

1000

Figure 9. Relative Radiant Power vs. Wavelength

0° 10 20

°

°

30°

40°

1.0

0.9

50°

0.8

60°

0.7

70°

80°

94 8021

0.6 0.4 0.2

0 0.2

0.4 0.6

Figure 10. Relative Radiant Intensity vs. Angular Displacement

VISHAY

www.vishay.com

4

Document Number 81048

Rev. 1.4, 11-May-04

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