MMBT2369A 查看數據表（PDF） - Fairchild Semiconductor

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MMBT2369A

NPN Switching Transistor

Fairchild Semiconductor 

Discrete POWER & Signal

Technologies

PN2369A

MMBT2369A MMPQ2369

C

BE

TO-92

C

SOT-23

Mark: 1S

E

B

EB

EB

EB

EB

CC

CC

CC

C

C

SOIC-16

NPN Switching Transistor

This device is designed for high speed saturation switching at collector

currents of 10 mA to 100 mA. Sourced from Process 21.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

VCEO

Collector-Emitter Voltage

15

VCBO

Collector-Base Voltage

40

VEBO

Emitter-Base Voltage

4.5

IC

Collector Current - Continuous

200

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES :

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units

V

V

V

mA

°C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

PD

Total Device Dissipation

Derate above 25°C

RθJC

Thermal Resistance, Junction to Case

RθJA

Thermal Resistance, Junction to Ambient

Effective 4 Die

Each Die

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

PN2369A

350

2.8

125

357

Max

MMBT2369A*

225

1.8

556

MMPQ2369

1,000

8.0

125

240

Units

mW

mW/°C

°C/W

°C/W

°C/W

°C/W

© 1997 Fairchild Semiconductor Corporation

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