FQP65N06 查看數據表（PDF） - Thinki Semiconductor Co., Ltd.
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FQP65N06 Datasheet PDF : 6 Pages
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FQP65N06
®
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
60
--
--
V
ID = 250 µA, Referenced to 25°C -- 0.07
--
V/°C
IDSS
IGSSF
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 150°C
VGS = 25 V, VDS = 0 V
--
--
1
µA
--
--
10
µA
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
--
-- -100 nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
4.0
V
VGS = 10 V, ID =32.5 A
-- 0.012 0.016 Ω
VDS = 25 V, ID = 32.5 A (Note 4)
--
48
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1850 2410 pF
-- 700 910
pF
-- 100 130
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 30 V, ID = 32.5 A,
RG = 25 Ω
-- 20
50
ns
-- 160 330
ns
--
90 190
ns
(Note 4, 5)
--
105
220
ns
VDS = 48 V, ID = 65 A,
-- 48
65
nC
VGS = 10 V
-- 12
--
nC
(Note 4, 5)
--
19.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
65
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 65 A
--
--
260
A
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 65 A,
-- 62
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
110
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 180µH, IAS = 65A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 65A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/6
http://www.thinkisemi.com/
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