BUZ172 查看數據表（PDF） - Siemens AG

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BUZ172

SIPMOS ® Power Transistor

Siemens AG 

BUZ 172

Avalanche energy EAS = ƒ(Tj)

parameter: ID = -5.5 A, VDD = -25 V

RGS = 25 Ω, L = 8.4 mH

180

mJ

EAS 140

120

100

80

60

40

20

0

20 40 60 80 100 120 °C 160

Tj

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj)

-120

V

V(BR)DS-S114

-112

-110

-108

-106

-104

-102

-100

-98

-96

-94

-92

-90

-60

-20

20

60

100 °C 160

Tj

Semiconductor Group

8

07/96

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