BUZ172 查看數據表（PDF） - Siemens AG
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BUZ172 Datasheet PDF : 9 Pages
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BUZ 172
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
-13
Ptot = 40W
A
l
k
-11
ID
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
-2
-4
-6
VGS [V]
j a -4.0
b -4.5
c -5.0
d -5.5
e -6.0
i f -6.5
g -7.0
h h -7.5
i -8.0
g j -9.0
k -10.0
f l -20.0
e
d
c
ab
-8 V -11
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
1.8
a bc d e
f
g
Ω
RDS (on) 1.4
1.2
1.0
0.8
0.6
h
0.4
i
0.2
VGS [V] =
ab
c
d
e
f
ghi
-45.05 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 -10.0-20.0
0.0
0
-2
-4
-6
-8
A
-12
ID
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
-14
A
-12
ID
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10
VGS
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
3.2
S
gfs
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0
-2
-4
-6
-8
A
-12
ID
Semiconductor Group
6
07/96
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