BUZ172 查看數據表（PDF） - Siemens AG
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BUZ172 Datasheet PDF : 9 Pages
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BUZ 172
Power dissipation
Ptot = ƒ(TC)
45
W
Ptot
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
-10 2
A
I
D
-10 1
tp = 25.0µs
100 µs
1 ms
-10 0
10 ms
DC
Drain current
ID = ƒ(TC)
parameter: VGS ≥ -10 V
-6.0
A
-5.0
ID
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
20 40 60 80 100 120 °C 160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 1
K/W
Z
thJC 10 0
10 -1
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
-10 -1
-10 0
-10 1
V -10 2
VDS
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Semiconductor Group
5
07/96
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