HYB3165800AT-50 查看數據表（PDF） - Infineon Technologies

零件编号

产品描述 (功能)

生产厂家

HYB3165800AT-50

8M x 8-Bit Dynamic RAM (4k & 8k Refresh)

Infineon Technologies 

HYB3164(5)800AJ/AT(L)-40/-50/-60

8M x 8-DRAM

Absolute Maximum Ratings

Operating temperature range..............................................................................................0 to 70 °C

Storage temperature range.........................................................................................– 55 to 150 °C

Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V

Power supply voltage....................................................................................................-0.5V to 4.6 V

Power dissipation......................................................................................................................1.0 W

Data out current (short circuit)..................................................................................................50 mA

Note

Stresses above those listed under „Absolute Maximum Ratings“ may cause permanent damage of

the device. Exposure to absolute maximum rating conditions for extended periods may effect device

reliability.

DC Characteristics

TA = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V

Parameter

Input high voltage

Input low voltage

Output high voltage (LVTTL)

Output „H“ level voltage (Iout = -2mA)

Output low voltage (LVTTL)

Output „L“level voltage (Iout = +2mA)

Output high voltage (LVCMOS)

Output „H“ level voltage (Iout = -100uA)

Ouput low voltage (LVCMOS)

Output „L“ level voltage (Iout = +100uA)

Input leakage current,any input

(0 V < Vin < Vcc , all other pins = 0 V

Output leakage current

(DO is disabled, 0 V < Vout < Vcc )

Symbol Limit Values

min. max.

VIH

2.0

Vcc+0.3

VIL

– 0.3 0.8

VOH

2.4

–

Unit Note

V 1)

V 1)

V

VOL

–

0.4

V

VOH

Vcc-0.2 -

V

VOL

-

0.2

V

II(L)

–2

2

µA

IO(L)

–2

2

µA

Semiconductor Group

7

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