IIRFR2407 查看數據表（PDF） - Inchange Semiconductor

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IIRFR2407

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

IRFR2407, IIRFR2407

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID=250μA

VGS(th)

Gate Threshold Voltage

VDS=VGS; ID=250μA

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=25A

IGSS

Gate-Source Leakage Current

VGS= ±20V

IDSS

Drain-Source Leakage Current

VDS=75V; VGS= 0V

VSD

Diode forward voltage

Is=25A, VGS = 0V

MIN TYP MAX UNIT

75

V

2

4

V

26

mΩ

±0.2 μA

20

μA

1.3

V

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