SO2222 查看數據表（PDF） - STMicroelectronics
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SO2222 Datasheet PDF : 5 Pages
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SO2222/SO2222A
ELECTRICAL CHARACTERISTICS (Continued)
Symb ol
P a ram et er
Test Conditions
CEB Emitt er Base
Capacitance
IE = 0 VEB = 0.5 V f = 1MHz
for SO2222
for SO2222A
NF Noise Figure
IC = 0. 1 mA VCE = 10 V f = 1 KHz
∆f = 200 Hz RG = 1 KΩ
for SO2222A only
hie∗ Input Impedance
VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz
for SO2222A only
hre∗ Reverse Voltage Ratio VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz
for SO2222A only
hfe∗ Small Signal Current VCE = 10 V IC = 1 mA f = 1 KHz
Gain
VCE = 10 V IC = 10 mA f = 1 KHz
for SO2222A only
hoe∗ Output Admittance
VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz
for SO2222A only
td
Delay Time
tr
Rise Time
IC = -150 mA VBE = -0.5 V
for SO2222A only
ts
Storage Time
IC = 150 mA IB1 = -IB2 = 15mA
tf
Fall Time
for SO2222A only
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
Min.
2
0.25
50
75
5
25
Typ .
M a x.
30
25
4
8
1.25
8
4
300
375
35
200
10
25
225
60
Unit
pF
pF
dB
KΩ
KΩ
10-4
10-4
µS
µS
ns
ns
ns
ns
3/5
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