MRF157 查看數據表（PDF） - Tyco Electronics

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MRF157

Power Field Effect Transistor

Tyco Electronics 

SEMICONDUCTOR TECHNICAL DATA

The RF Power MOS Line

Power Field Effect Transistor

N–Channel Enhancement Mode

Designed primarily for linear large–signal output stages to 80 MHz.

• Specified 50 Volts, 30 MHz Characteristics

Output Power = 600 Watts

Power Gain = 21 dB (Typ)

Efficiency = 45% (Typ)

D

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by MRF157/D

MRF157

600 W, to 80 MHz

MOS LINEAR

RF POWER FET

G

S

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Drain–Gate Voltage

Gate–Source Voltage

Drain Current — Continuous

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range

Operating Junction Temperature

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

VDSS

VDGO

VGS

ID

PD

Tstg

TJ

Symbol

RθJC

CASE 368–03, STYLE 2

Value

125

125

±40

60

1350

7.7

–65 to +150

200

Max

0.13

Unit

Vdc

Vdc

Vdc

Adc

Watts

W/°C

°C

°C

Unit

°C/W

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 1

1

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