BF370 查看數據表（PDF） - Philips Electronics

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BF370

NPN medium frequency transistor

Philips Electronics 

Philips Semiconductors

NPN medium frequency transistor

Product specification

BF370

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 15 V).

APPLICATIONS

• IF pre-amplifiers of television receivers.

DESCRIPTION

NPN medium frequency transistor in a TO-92; SOT54

plastic package.

PINNING

PIN

1

2

3

emitter

base

collector

DESCRIPTION

handbook, halfpage1

2

3

MAM370

Fig.1 Simplified outline (TO-92; SOT54)

and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

VEBO

IC

ICM

Ptot

Tstg

Tj

Tamb

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

total power dissipation

storage temperature

junction temperature

operating ambient temperature

open emitter

open base

open collector

Tamb ≤ 25 °C; note 1

Note

1. Transistor mounted on an FR4 printed-circuit board.

MIN.

−

−

−

−

−

−

−65

−

−65

MAX.

40

15

4.5

100

200

500

+150

150

+150

UNIT

V

V

V

mA

mA

mW

°C

°C

°C

1999 Apr 21

2

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